Class 12 Physics simulations · Semiconductor Electronics

Electrons and holes in doped silicon

Heat silicon or add donor atoms and see how the electron and hole concentrations change.

Open the simulation

What to notice

Doping makes one carrier dominate; the product n·p stays fixed at nᵢ² for a given temperature.

Key relation

n·p = nᵢ² ; nᵢ ∝ T^(3/2) e^(−E_g/2kT)

Try this

Raise the temperature until intrinsic carriers swamp the doping.

What you can change

• Temperature: 200 to 600 K
• Donor concentration (log₁₀ cm⁻³): 8 to 18
• Dopant: choose Donor (n-type), Acceptor (p-type)

More in Semiconductor Electronics

• P–N junction diode
• Diode I–V characteristic
• LED colour and band gap
• Logic gates
• Half-wave rectifier
• Rectifier with a smoothing capacitor
• Solar cell: I–V curve and maximum power
• Transistor as a switch
• Zener voltage regulator

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